BSP149H6327XTSA1

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BSP149H6327XTSA1

Manufacturer part number:BSP149H6327XTSA1

Manufacturer:Infineon Technologies

Description:BSP149H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSP149H6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2002
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.8W Ta
Element Configuration	Single
Power Dissipation	1.8W
Case Connection	DRAIN
Turn On Delay Time	5.1 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.8 Ω @ 660mA, 10V
Vgs(th) (Max) @ Id	1V @ 400μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	430pF @ 25V
Current - Continuous Drain (Id) @ 25°C	660mA Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 5V
Rise Time	3.4ns
Drive Voltage (Max Rds On,Min Rds On)	0V 10V
Vgs (Max)	±20V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	480mA
Threshold Voltage	-1.4V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	200V
Drain Current-Max (Abs) (ID)	0.66A
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	2.6A
Dual Supply Voltage	200V
FET Feature	Depletion Mode
Nominal Vgs	-1.4 V
Height	1.6mm
Length	6.5mm
Width	3.5mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free