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BSP324L6327HTSA1

BSP324L6327HTSA1

BSP324L6327HTSA1

Infineon Technologies

Trans MOSFET N-CH 400V 0.17A 4-Pin(3+Tab) SOT-223 T/R

SOT-23

BSP324L6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series SIPMOS®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.8W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 4.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25 Ω @ 170mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 94μA
Input Capacitance (Ciss) (Max) @ Vds 154pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Gate Charge (Qg) (Max) @ Vgs 5.9nC @ 10V
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 68 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 170mA
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 0.68A
Radiation Hardening No
RoHS Status RoHS Compliant

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