AUIRFU3607

new-10%

Manufacturer part number:AUIRFU3607

Manufacturer:Infineon Technologies

Description:MOSFET N CH 75V 56A I-PAK

Case Package:SOT-23

Datasheet:AUIRFU3607 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2015
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	140W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	140W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 46A, 10V
Vgs(th) (Max) @ Id	4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3070pF @ 50V
Current - Continuous Drain (Id) @ 25°C	56A Tc
Gate Charge (Qg) (Max) @ Vgs	84nC @ 10V
Rise Time	110ns
Drain to Source Voltage (Vdss)	75V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	96 ns
Turn-Off Delay Time	43 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	56A
Drain-source On Resistance-Max	0.009Ohm
DS Breakdown Voltage-Min	75V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free