IRF640L

new-10%

Manufacturer part number:IRF640L

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 18A TO-262

Case Package:SOT-23

Datasheet:IRF640L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Supplier Device Package	I2PAK
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	3.1W Ta 130W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	18A
Input Capacitance	1.3nF
Rds On Max	180 mΩ
RoHS Status	Non-RoHS Compliant