FDB14AN06LA0

new-10%

Manufacturer part number:FDB14AN06LA0

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 67A TO-263AB

Case Package:SOT-23

Datasheet:FDB14AN06LA0 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	60A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11.6m Ω @ 67A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Ta 67A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 5V
Rise Time	169ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	67A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	10A
Drain-source On Resistance-Max	0.0146Ohm
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	46 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free