BSS205NH6327XTSA1

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BSS205NH6327XTSA1

Manufacturer part number:BSS205NH6327XTSA1

Manufacturer:Infineon Technologies

Description:BSS205NH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSS205NH6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Manufacturer Package Identifier	PG-SOT23
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	500mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Turn On Delay Time	5.8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	50m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 11μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	419pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.5A Ta
Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 4.5V
Rise Time	2.9ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	2.5A
Threshold Voltage	700mV
Gate to Source Voltage (Vgs)	12V
Max Dual Supply Voltage	20V
Drain-source On Resistance-Max	0.05Ohm
Drain to Source Breakdown Voltage	20V
Max Junction Temperature (Tj)	150°C
Feedback Cap-Max (Crss)	24 pF
Height	1.1mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free