NTGD4169FT1G

new-10%

Manufacturer part number:NTGD4169FT1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 2.6A 6-TSOP

Case Package:SOT-23

Datasheet:NTGD4169FT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-25°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	900mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	900mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 2.6A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	295pF @ 15V
Current - Continuous Drain (Id) @ 25°C	2.6A Ta
Gate Charge (Qg) (Max) @ Vgs	5.5nC @ 4.5V
Rise Time	4ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	2.6A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.09Ohm
Drain to Source Breakdown Voltage	30V
FET Feature	Schottky Diode (Isolated)
RoHS Status	RoHS Compliant
Lead Free	Lead Free