Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	CoolMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	63W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	63W
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 210μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	440pF @ 100V
Current - Continuous Drain (Id) @ 25°C	7.3A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	64 ns
Continuous Drain Current (ID)	7.3A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.6Ohm
RoHS Status	RoHS Compliant
Lead Free	Lead Free

IPP65R600E6XKSA1

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