DMN6040SVT-7

new-10%

Manufacturer part number:DMN6040SVT-7

Manufacturer:Diodes Incorporated

Description:MOSFET N CH 60V 5A TSOT26

Case Package:SOT-23

Datasheet:DMN6040SVT-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.2W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Turn On Delay Time	6.6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	44m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1287pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5A Ta
Gate Charge (Qg) (Max) @ Vgs	22.4nC @ 10V
Rise Time	8.1ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	20.1 ns
Continuous Drain Current (ID)	5A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	4.3A
Drain-source On Resistance-Max	0.044Ohm
Drain to Source Breakdown Voltage	60V
Height	900μm
Length	2.9mm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free