NTTD4401FR2

new-10%

Manufacturer part number:NTTD4401FR2

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 2.4A 8MICRO

Case Package:SOT-23

Datasheet:NTTD4401FR2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	FETKY™
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Current Rating	-3.3A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	780mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.42W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	750pF @ 16V
Current - Continuous Drain (Id) @ 25°C	2.4A Ta
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V
Rise Time	35ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±10V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	2.4A
Gate to Source Voltage (Vgs)	-10V
Drain-source On Resistance-Max	0.09Ohm
Drain to Source Breakdown Voltage	-20V
FET Feature	Schottky Diode (Isolated)
Feedback Cap-Max (Crss)	175 pF
RoHS Status	RoHS Compliant
Lead Free	Lead Free