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STW30N80K5

  • STW30N80K5
  • STW30N80K5

STW30N80K5

STW30N80K5

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 180m Ω @ 12A, 10V ±30V 1530pF @ 100V 43nC @ 10V 800V TO-247-3

SOT-23

STW30N80K5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 17 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ K5
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW30N
Power Dissipation-Max 250W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1530pF @ 100V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.88000 $7.88
10 $7.08000 $70.8
100 $5.88750 $588.75
600 $4.85452 $2912.712
1,200 $4.16583 $4.16583
STW30N80K5 Product Details

STW30N80K5 Description


STW30N80K5 is a type of N-channel power MOSFET provided by ON Semiconductor based on MDmesh? K5 technology. Based on its innovative vertical structure, it is able to provide low on-resistance and low gate charge for applications where superior power density and high efficiency are required.



STW30N80K5 Features


  • Low RDS (on)

  • Low on-resistance

  • Low input capacitance

  • Improved vertical structure

  • Extremely low gate charge

  • Available in the TO-247 package



STW30N80K5 Applications


  • Switching applications


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