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SN7002WH6327XTSA1

SN7002WH6327XTSA1

SN7002WH6327XTSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 5 Ω @ 230mA, 10V ±20V 45pF @ 25V 1.5nC @ 10V SC-70, SOT-323

SOT-23

SN7002WH6327XTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series SIPMOS®
Published 1996
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 2.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5 Ω @ 230mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 26μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
Rise Time 2.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 6 ns
Continuous Drain Current (ID) 230mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 5Ohm
Drain to Source Breakdown Voltage 60V
Feedback Cap-Max (Crss) 4.5 pF
Height 800μm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.07480 $0.2244
6,000 $0.06573 $0.39438
15,000 $0.05665 $0.84975
30,000 $0.05363 $1.6089
75,000 $0.05060 $3.795
150,000 $0.04455 $6.6825
SN7002WH6327XTSA1 Product Details

SN7002WH6327XTSA1 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 45pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 230mA amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 2.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 60V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SN7002WH6327XTSA1 Features


a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns


SN7002WH6327XTSA1 Applications


There are a lot of Infineon Technologies
SN7002WH6327XTSA1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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