BSZ160N10NS3GATMA1

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Manufacturer part number:BSZ160N10NS3GATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 40A TSDSON-8

Case Package:SOT-23

Datasheet:BSZ160N10NS3GATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Reach Compliance Code	not_compliant
Pin Count	8
JESD-30 Code	S-PDSO-N5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 63W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 12μA
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 50V
Current - Continuous Drain (Id) @ 25°C	8A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	40A
Drain-source On Resistance-Max	0.016Ohm
Pulsed Drain Current-Max (IDM)	160A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	80 mJ
RoHS Status	ROHS3 Compliant