NTS4173PT1G

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Manufacturer part number:NTS4173PT1G

Manufacturer:ON Semiconductor

Description:NTS4173PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTS4173PT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Power Dissipation-Max	290mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350mW
Turn On Delay Time	7.7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	430pF @ 15V
Current - Continuous Drain (Id) @ 25°C	1.2A Ta
Gate Charge (Qg) (Max) @ Vgs	10.1nC @ 10V
Rise Time	6.7ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	7.1 ns
Turn-Off Delay Time	19.9 ns
Continuous Drain Current (ID)	-1.2A
Threshold Voltage	-1.15V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-30V
Nominal Vgs	-1.15 V
Height	900μm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free