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APT37M100B2

APT37M100B2

APT37M100B2

Microsemi Corporation

MOSFET (Metal Oxide) N-Channel Tube 330m Ω @ 18A, 10V ±30V 9835pF @ 25V 305nC @ 10V 1000V TO-247-3 Variant

SOT-23

APT37M100B2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish PURE MATTE TIN
Additional Feature AVALANCHE RATED
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 37A
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1135W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 44 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 330m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 9835pF @ 25V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Gate Charge (Qg) (Max) @ Vgs 305nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 37A
Gate to Source Voltage (Vgs) 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $21.54000 $21.54
10 $19.92700 $199.27
100 $17.01850 $1701.85
500 $15.07968 $7539.84
APT37M100B2 Product Details

APT37M100B2 Overview


A device's maximum input capacitance is 9835pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 37A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 150 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 44 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

APT37M100B2 Features


a continuous drain current (ID) of 37A
the turn-off delay time is 150 ns
a 1000V drain to source voltage (Vdss)


APT37M100B2 Applications


There are a lot of Microsemi Corporation
APT37M100B2 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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