FDP39N20

new-10%

Manufacturer part number:FDP39N20

Manufacturer:ON Semiconductor

Description:N-Channel Tube 66m Ω @ 19.5A, 10V ±30V 2130pF @ 25V 49nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:FDP39N20 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	4 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	UniFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	FAST SWITCHING
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	251W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	251W
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	66m Ω @ 19.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2130pF @ 25V
Current - Continuous Drain (Id) @ 25°C	39A Tc
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V
Rise Time	160ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	150 ns
Turn-Off Delay Time	150 ns
Continuous Drain Current (ID)	39A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.066Ohm
Drain to Source Breakdown Voltage	200V
Avalanche Energy Rating (Eas)	860 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant