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BSZ440N10NS3GATMA1

BSZ440N10NS3GATMA1

BSZ440N10NS3GATMA1

Infineon Technologies

BSZ440N10NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSZ440N10NS3GATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 29W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 29W
Case Connection DRAIN
Turn On Delay Time 4.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 44m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2.7V @ 12μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 50V
Current - Continuous Drain (Id) @ 25°C 5.3A Ta 18A Tc
Gate Charge (Qg) (Max) @ Vgs 9.1nC @ 10V
Rise Time 1.8ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 9.1 ns
Continuous Drain Current (ID) 5.3A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.044Ohm
Pulsed Drain Current-Max (IDM) 72A
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $12.029120 $12.02912
10 $11.348226 $113.48226
100 $10.705874 $1070.5874
500 $10.099881 $5049.9405
1000 $9.528190 $9528.19
BSZ440N10NS3GATMA1 Product Details

BSZ440N10NS3GATMA1 Description


The BSZ440N10NS3GATMA1 is an OptiMOS? N-channel Power MOSFET offering superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor BSZ440N10NS3GATMA1 is in the TSDSON-8 package with 29W power dissipation.



BSZ440N10NS3GATMA1 Features


  • Very low gate charge for high frequency applications

  • Optimized for dc-dc conversion

  • N-channel, normal level

  • Excellent gate charge x RDS(on) product (FOM)

  • Very low on-resistance RDS(on)

  • 150°C operating temperature

  • Pb-free lead plating; RoHS compliant

  • Qualified according to JEDEC1) for target application

  • Halogen-free according to IEC61249-2-21



BSZ440N10NS3GATMA1 Applications


  • Synchronous rectification for AC-DC SMPS

  • Motor control for 48V–80V systems (i.e. domestic vehicles, power tools, trucks)

  • Isolated DC-DC converters (telecom and datacom systems

  • Or-ing switches and circuit breakers in 48V systems

  • Class D audio amplifiers

  • Uninterruptable power supplies (UPS)


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