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FDV301N

FDV301N

FDV301N

ON Semiconductor

FDV301N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDV301N Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier SOT−23 (TO−236) CASE 318−08 ISSUE AR
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 4Ohm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 220mA
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Voltage 50V
Power Dissipation-Max 350mW Ta
Element Configuration Single
Current 2A
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Turn On Delay Time 3.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1.06V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C 220mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 3.5 ns
Continuous Drain Current (ID) 220mA
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 850 mV
Height 1.11mm
Length 2.92mm
Width 3.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.115848 $0.115848
500 $0.085182 $42.591
1000 $0.070985 $70.985
2000 $0.065124 $130.248
5000 $0.060864 $304.32
10000 $0.056617 $566.17
15000 $0.054755 $821.325
50000 $0.053840 $2692
FDV301N Product Details

Description


The FDV301N is a SOT-23 surface mount digital FET with N channels and logic level enhancement mode. This device has a high cell density, DMOS technology that has been specifically tailored to minimize on-state resistance and maintain low gate charge for superior switching performance, and it can replace several different digital transistors with different bias resistor values with just one N channel FET. Low voltage and power management applications are ideal for the FDV301N.



Features


? Gate-Source Zener for ESD ruggedness. >6kV Human Body Model

? Replace multiple NPN digital transistors with one DMOS FET.

? 25 V, 0.22 A continuous, 0.5 A Peak.

RDS(ON) = 5 W @ VGS= 2.7 V

RDS(ON) = 4 W @ VGS= 4.5 V

? Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06V.

? This Device is Pb?Free and Halide Free



Applications


? Low Voltage

? Power Management Applications

? Buffer Amplifier

? Analog Switch

? Current Limiter


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