FDV301N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDV301N Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 15 hours ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Manufacturer Package Identifier
SOT−23 (TO−236) CASE 318−08 ISSUE AR
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1999
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
4Ohm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
25V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
220mA
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Number of Channels
1
Voltage
50V
Power Dissipation-Max
350mW Ta
Element Configuration
Single
Current
2A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
350mW
Turn On Delay Time
3.2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4 Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id
1.06V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C
220mA Ta
Gate Charge (Qg) (Max) @ Vgs
0.7nC @ 4.5V
Rise Time
6ns
Drive Voltage (Max Rds On,Min Rds On)
2.7V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
6 ns
Turn-Off Delay Time
3.5 ns
Continuous Drain Current (ID)
220mA
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
25V
Dual Supply Voltage
25V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
850 mV
Height
1.11mm
Length
2.92mm
Width
3.05mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.115848
$0.115848
500
$0.085182
$42.591
1000
$0.070985
$70.985
2000
$0.065124
$130.248
5000
$0.060864
$304.32
10000
$0.056617
$566.17
15000
$0.054755
$821.325
50000
$0.053840
$2692
FDV301N Product Details
Description
The FDV301N is a SOT-23 surface mount digital FET with N channels and logic level enhancement mode. This device has a high cell density, DMOS technology that has been specifically tailored to minimize on-state resistance and maintain low gate charge for superior switching performance, and it can replace several different digital transistors with different bias resistor values with just one N channel FET. Low voltage and power management applications are ideal for the FDV301N.
Features
? Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
? Replace multiple NPN digital transistors with one DMOS FET.
? 25 V, 0.22 A continuous, 0.5 A Peak.
RDS(ON) = 5 W @ VGS= 2.7 V
RDS(ON) = 4 W @ VGS= 4.5 V
? Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06V.