BUZ30AH3045AATMA1

new-10%

Manufacturer part number:BUZ30AH3045AATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:BUZ30AH3045AATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	no
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Power Dissipation-Max	125W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	130m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Rise Time	70ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	90 ns
Turn-Off Delay Time	250 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	200V
Pulsed Drain Current-Max (IDM)	84A
Avalanche Energy Rating (Eas)	450 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead