STW70N60M2

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Manufacturer part number:STW70N60M2

Manufacturer:STMicroelectronics

Description:STW70N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW70N60M2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	MDmesh™ II Plus
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Base Part Number	STW70N
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	450W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	450W
Turn On Delay Time	32 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 34A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5200pF @ 100V
Current - Continuous Drain (Id) @ 25°C	68A Tc
Gate Charge (Qg) (Max) @ Vgs	118nC @ 10V
Rise Time	17ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	155 ns
Continuous Drain Current (ID)	68A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.04Ohm
Pulsed Drain Current-Max (IDM)	272A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	9000 mJ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free