DF150R12RT4HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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DF150R12RT4HOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
5
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X4
Number of Elements
1
Configuration
Single Chopper
Element Configuration
Single
Power Dissipation
790W
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
150A
Collector Emitter Saturation Voltage
2.15V
Turn On Time
185 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 150A
Turn Off Time-Nom (toff)
490 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
9.3nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$138.152446
$138.152446
10
$130.332496
$1303.32496
100
$122.955185
$12295.5185
500
$115.995457
$57997.7285
1000
$109.429677
$109429.677
DF150R12RT4HOSA1 Product Details
DF150R12RT4HOSA1 Description
DF150R12RT4HOSA1 developed by Infineon Technologies is a type of 34mm module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode. It is able to deliver low switching losses and low VCEsat. It is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. Based on its specific characteristics, the DF150R12RT4HOSA1 IGBT module provides optimum performance for motor drives, high-frequency switching applications, and UPS systems.