FD1200R17KE3KNOSA1 Description

FD1200R17KE3KNOSA1 is a 1700v IGBT. The transistor FD1200R17KE3KNOSA1 can be applied in Automotive,  Body electronics & lighting, Communications equipment, Datacom module, Personal electronics, and Connected peripherals & printers applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FD1200R17KE3KNOSA1 is in the tray package with 5kW Power dissipation.

FD1200R17KE3KNOSA1 Features

Collector-emitter voltage Tvj = 25°C: 1700v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 1600A

Gate-emitter peak voltage: +/-20 V

The temperature under switching conditions Tvj op:  -40 to 125 °C

Continuous DC forward current: 1200A

FD1200R17KE3KNOSA1 Applications

Automotive 

Body electronics & lighting 

Communications equipment 

Datacom module 

Personal electronics 

Connected peripherals & printers