FD150R12RT4HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FD150R12RT4HOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
5
Operating Temperature
-40°C~150°C TJ
Published
2002
Series
C
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Power Dissipation
790W
Terminal Position
UPPER
Pin Count
7
JESD-30 Code
R-XUFM-X4
Number of Elements
1
Configuration
Single Chopper
Element Configuration
Single
Power Dissipation
790W
Case Connection
ISOLATED
Halogen Free
Not Halogen Free
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
150A
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.15V
Turn On Time
185 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 150A
Turn Off Time-Nom (toff)
490 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
9.3nF @ 25V
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$54.37000
$54.37
10
$51.07600
$510.76
FD150R12RT4HOSA1 Product Details
FD150R12RT4HOSA1 Description
The FD150R12RT4HOSA1 is a 34 mm 1200 V, 150 A chopper IGBT module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode are the right choice for your design.34 mm 1200 V, 150 A chopper IGBT modules with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode are the right choice for your design.