FS500R17OE4DBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FS500R17OE4DBOSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
52 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Series
EconoPACK™+
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
29
ECCN Code
EAR99
Additional Feature
UL RECOGNIZED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X29
Number of Elements
6
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
3000W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
740A
Turn On Time
330 ns
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 500A
Turn Off Time-Nom (toff)
1080 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
40nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$982.745877
$98274.5877
500
$912.484566
$456242.283
FS500R17OE4DBOSA1 Product Details
FS500R17OE4DBOSA1 Description
FS500R17OE4DBOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FS500R17OE4DBOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.