FP15R12W1T4BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP15R12W1T4BOMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
23
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
23
ECCN Code
EAR99
Max Power Dissipation
130W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
23
Qualification Status
Not Qualified
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
130W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
28A
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
1.85V
Turn On Time
120 ns
Vce(on) (Max) @ Vge, Ic
2.25V @ 15V, 15A
Turn Off Time-Nom (toff)
495 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
890pF @ 25V
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$24.338560
$24.33856
10
$22.960906
$229.60906
100
$21.661232
$2166.1232
500
$20.435124
$10217.562
1000
$19.278419
$19278.419
FP15R12W1T4BOMA1 Product Details
FP15R12W1T4BOMA1 Description
FP15R12W1T4BOMA1 is a 1200v IGBT. The Infineon FP15R12W1T4BOMA1 can be applied in auxiliary inverters, air conditioning, motor drives, and automotive applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FP15R12W1T4BOMA1 is in the Tray package with 130W power dissipation.