FZ1200R12HE4PHPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ1200R12HE4PHPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
52 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X7
Number of Elements
2
Configuration
Single Switch
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
1825A
Turn On Time
660 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 1200A
Turn Off Time-Nom (toff)
1130 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
74nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$688.383000
$688.383
10
$649.417925
$6494.17925
100
$612.658419
$61265.8419
500
$577.979641
$288989.8205
1000
$545.263812
$545263.812
FZ1200R12HE4PHPSA1 Product Details
FZ1200R12HE4PHPSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.