FD400R12KE3B5HOSA1 Description

The FD400R12KE3B5HOSA1 is a 62mm C-series module with trench/fieldstop IGBT3 and Emitter Controlled High-Efficiency series diode. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

FD400R12KE3B5HOSA1 Features

• Tvj = 25°C

• TC = 80°C, Tvj max = 150°C

• TC = 25°C, Tvj max = 150°C

• tP = 1 ms 

• TC = 25°C, Tvj max = 150

FD400R12KE3B5HOSA1 Applications

• It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

• It is used in UPS (Uninterruptible Power Supply) system.

• It is used in AC and DC motor drives offering speed control.

• It is used in chopper and inverters.

• It is used in solar inverters.