FF200R12KE3B2HOSA1 Description

FF200R12KE3B2HOSA1 is a 1200v IGBT-modules.  The FF200R12KE3B2HOSA1 can be applied in  Automotive, Hybrid, electric & powertrain systems, Enterprise systems, Enterprise projectors, Personal electronics, and  Home theater & entertainment applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FF200R12KE3B2HOSA1 is in the tray package with 1050W Power dissipation.

FF200R12KE3B2HOSA1 Features

Collector-emitter voltage Tvj = 25°C: 1200v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 295A

Repetitive peak collector current Tp = 1 ms: 400A

Total power dissipation Tc = 25°C: 1050W

Gate-emitter peak voltage: ±20V

FF200R12KE3B2HOSA1 Applications

Automotive 

Hybrid, electric & powertrain systems 

Enterprise systems 

Enterprise projectors 

Personal electronics 

Home theater & entertainment