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MIXA300PF1200TSF

MIXA300PF1200TSF

MIXA300PF1200TSF

IXYS

IGBT Modules XPT IGBT Module

SOT-23

MIXA300PF1200TSF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 10
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.5kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Reference Standard IEC-60747
JESD-30 Code R-XUFM-X11
Number of Elements 2
Configuration Half Bridge
Power Dissipation 1.5kW
Case Connection ISOLATED
Power - Max 1500W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 465A
Current - Collector Cutoff (Max) 300μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 178 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 300A
Turn Off Time-Nom (toff) 635 ns
IGBT Type PT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3 $123.09000 $369.27

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