FF150R12ME3GBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF150R12ME3GBOSA1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Pbfree Code
no
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
11
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
11
JESD-30 Code
R-XUFM-X11
Qualification Status
Not Qualified
Number of Elements
2
Configuration
Single Chopper
Case Connection
ISOLATED
Power - Max
695W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
200A
Turn On Time
400 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 150A
Turn Off Time-Nom (toff)
810 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
10.5nF @ 25V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$140.070998
$140.070998
10
$132.142451
$1321.42451
100
$124.662689
$12466.2689
500
$117.606311
$58803.1555
1000
$110.949350
$110949.35
FF150R12ME3GBOSA1 Product Details
FF150R12ME3GBOSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.