FZ2400R12HP4B9HOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ2400R12HP4B9HOSA2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
50 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
9
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-XUFM-X9
Number of Elements
3
Configuration
Single Switch
Case Connection
ISOLATED
Power - Max
13500W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
3.55kA
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
3550A
Turn On Time
880 ns
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 2400A
Turn Off Time-Nom (toff)
1440 ns
IGBT Type
Trench
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
150nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$993.661520
$49683.076
100
$973.223820
$97322.382
500
$903.643287
$451821.6435
FZ2400R12HP4B9HOSA2 Product Details
FZ2400R12HP4B9HOSA2 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.