FF200R12KE4HOSA1 Description

FF200R12KE4HOSA1 is a 600v IGBT module. The FF200R12KE4HOSA1 can be applied in  Automotive, Hybrid, electric & powertrain systems, Communications equipment, Datacom module, Enterprise systems, and Enterprise machine applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FF200R12KE4HOSA1 is in the tray package with 1100W Power dissipations.

FF200R12KE4HOSA1 Features

Collector-emitter voltage Tvj = 25°C: 600v

Continuous DC collector current TC = 25°C : 25A

Repetitive peak collector current Tp = 1 ms: 40A

Total power dissipation Tc = 25°C: 89W

Gate-emitter peak voltage: ±20V

FF200R12KE4HOSA1 Applications

Automotive 

Hybrid, electric & powertrain systems 

Communications equipment 

Datacom module 

Enterprise systems 

Enterprise machine