FF600R12ME4PB11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF600R12ME4PB11BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Surface Mount
NO
Transistor Element Material
SILICON
Published
2006
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X7
Number of Elements
2
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn On Time
310 ns
Collector Current-Max (IC)
995A
Turn Off Time-Nom (toff)
770 ns
Collector-Emitter Voltage-Max
1200V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
6
$242.54833
$1455.28998
FF600R12ME4PB11BOSA1 Product Details
FF600R12ME4PB11BOSA1 Description
FF600R12ME4PB11BOSA1 is a 1200v EconoDUAL?3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and PressFIT/NTC/TIM. The Infineon FF600R12ME4PB11BOSA1 can be applied in High power converters, Motor drives, Servo drives, UPS systems, and Wind turbine applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FF600R12ME4PB11BOSA1 is in the tray package with 20mW Power dissipation.