FF300R12KE4B2HOSA1 Description

The FF300R12KE4B2HOSA1 is a 1200 V, 300 A dual IGBT module, 62mmC-series module with trench/fieldstop IGBT4, Emitter Controlled diode and M5 power terminals. The abbreviated version of an insulated-gate bipolar transistor is IGBT, which is a power semiconductor die. A grouping of numerous IGBT power semiconductor dies in one physical package is known as an IGBT power module.

FF300R12KE4B2HOSA1 Features

• Optimized switching characteristic like softness and reduced switching losses

• Existing packages with higher current capability

• RoHS compliant

• Superior solution for frequency controlled inverter drives

• UL/CSA Certification with UL1557 E83336

• Operating temperature up to 150 °C

• Flexibility

• Optimal electrical performance

• Highest reliability

FF300R12KE4B2HOSA1 Applications

• Motor control and drives

• Servo motor – controller and driver

• Air conditioners

• Refrigerators

• Electric cars