FF300R12KT3PEHOSA1                                  Description

An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.

FF300R12KT3PEHOSA1                                 FEATURES

Low Noise:20uVms(10Hz to 100kHz) Output Current:500mA

Low Quiescent Current:30uA

Wide Input Voltage Range:1.8Vto20V Low Dropout Voltaqe:300mV

Very Low Shutdown Current:<1uA No Protection Diodes Needed

Fixed Output Voltages: 1.5V1.8V2.5V.3V3.3V5V Adjustable Output from 1.22Vto20V Stable with 3.3uF Output Capacitor

Stable with Aluminum.Tantalum or Ceramic Capacitors

Reverse Battery Protection No Reverse Current

Over current and Over temperature Protected8-Lead SO and 12-Lead(4mmx3mm)DFN Packages

FF300R12KT3PEHOSA1                                 APPLICATIONS

Cellular Phones

Battery-Powered Systems

Noise-Sensitive Instrumentation Systems