FF600R12IE4VBOSA1                    Description

An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.

FF600R12IE4VBOSA1                     Applications

·High Power Converters

·Motor Drives

·Servo Drives

·UPS Systems

·Wind Turbines

FF600R12IE4VBOSA1                    Features

·Low VCEsat

·Tvjop =150°℃

·VCEsat with positive Temperature Coefficient

Mechanical Features

·High Power Density

·lsolated Base Plate

·Standard Housing