FF600R12ME4B72BOSA1                         Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

FF600R12ME4B72BOSA1                         Applications

·High power converters

·Motor drives Servo drives

·UPS systems

·Wind turbines

FF600R12ME4B72BOSA1                        Features

·Low VCEsat·Tvjop=150℃

·VCEsat with positive temperature coefficient

Mechanical Features

·High power density

·lsolated base plate

·Standard housing