FF650R17IE4DPB2BOSA1 Description

The FF650R17IE4DPB2BOSA1 is a PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die.

The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module. Normal electrical connections between the dies include half-bridge, 3-level, dual, chopper, booster, etc.

FF650R17IE4DPB2BOSA1 Features

Electrical Features

• Tvjop=150°C

• VCEsat with positive temperature coefficient

• Enlarged diode for regenerative operation

• High short-circuit capability

• High surge current capability

• High current density

Mechanical Features

• RoHS compliant

• Pre-applied Thermal Interface Material

• High creepage and clearance distances

• High power and thermal cycling capability

• 4 kV AC 1min insulation

• Package with CTI>400

FF650R17IE4DPB2BOSA1 Applications

• Traction drives

• Wind turbines

• Industrial motors

• Automotive

• Motor controllers