FP10R12W1T7B11BOMA1

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Manufacturer part number:FP10R12W1T7B11BOMA1

Manufacturer:Infineon Technologies

Description:FP10R12W1T7B11BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:FP10R12W1T7B11BOMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Chassis Mount
Package / Case	Module
Operating Temperature	-40°C~75°C TJ
Series	EasyPIM™ 1B
Part Status	Active
Moisture Sensitivity Level (MSL)	2 (1 Year)
Configuration	Three Phase Inverter
Power - Max	20mW
Input	Three Phase Bridge Rectifier
Current - Collector Cutoff (Max)	4.5μA
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	10A
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 10A
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	1890pF @ 25V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$38.452560	$38.45256
10	$36.276000	$362.76
100	$34.222642	$3422.2642
500	$32.285511	$16142.7555
1000	$30.458029	$30458.029

FP10R12W1T7B11BOMA1 Description

FP10R12W1T7B11BOMA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FP10R12W1T7B11BOMA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FP10R12W1T7B11BOMA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FP10R12W1T7B11BOMA1 Applications

ISM applications

DC large signal applications

Power factor correction

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