FP150R12KT4PB11BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP150R12KT4PB11BPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Published
2002
Series
EconoPIM™3
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
43
ECCN Code
EAR99
Additional Feature
UL RECOGNIZED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X43
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Three Phase Bridge Rectifier
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
150A
Turn On Time
270 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 150A
Turn Off Time-Nom (toff)
750 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
9.35nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$250.86000
$250.86
FP150R12KT4PB11BPSA1 Product Details
FP150R12KT4PB11BPSA1 Description
FP150R12KT4PB11BPSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FP150R12KT4PB11BPSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 150A. The FP150R12KT4PB11BPSA1 has 43 pins and it is available in Module packaging way. FP150R12KT4PB11BPSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FP150R12KT4PB11BPSA1 Features
Input Capacitance (Cies) @ Vce: 9.35nF @ 25V
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Voltage - Collector Emitter Breakdown (Max): 1200V