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BSM100GD120DN2BOSA1

BSM100GD120DN2BOSA1

BSM100GD120DN2BOSA1

Infineon Technologies

BSM100GD120DN2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

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BSM100GD120DN2BOSA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 39
ECCN Code EAR99
Terminal Position UPPER
Terminal Form THROUGH-HOLE
Pin Count 39
JESD-30 Code R-XUFM-T39
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 680W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 2mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 150A
Turn On Time 240 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 100A
Turn Off Time-Nom (toff) 470 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 6.5nF @ 25V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10 $232.20100 $2322.01
BSM100GD120DN2BOSA1 Product Details

BSM100GD120DN2BOSA1 Description


The BSM100GD120DN2BOSA1 is an IGBT Power Module. IGBT modules from Infineon have low switching losses and can switch frequencies up to 60 Khz.

The IGBTs are used in a variety of power modules, such as the PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V and the ECONOPACK packages with collector emitter voltage at 1200V. Industrial, commercial, construction, and agricultural vehicles all use PrimePACK IGBTs. Inverters, UPS systems, and industrial drives are among the hard switching and soft switching applications that the N-Channel TRENCHSTOP? and Fieldstop IGBT Modules are appropriate for.

A three-terminal power semiconductor with high efficiency and quick switching is known as an Insulated Gate Bipolar Transistor, or IGBT. By fusing a bipolar power transistor for the switch and an isolated gate FET for the control input into a single component, the IGBT combines the straightforward gate-drive properties of MOSFETs with the high-current and low-saturation-voltage capabilities of bipolar transistors.



BSM100GD120DN2BOSA1 Features


  • Solderable Power module

  • 3-phase full-bridge

  • Package with insulated metal base plate



BSM100GD120DN2BOSA1 Applications


  • As a switch

  • DC-to-AC conversion

  • Motors

  • Home appliances

  • Inverter applications


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