BSM100GD120DN2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
BSM100GD120DN2BOSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
39
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
THROUGH-HOLE
Pin Count
39
JESD-30 Code
R-XUFM-T39
Number of Elements
6
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
680W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
2mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
150A
Turn On Time
240 ns
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 100A
Turn Off Time-Nom (toff)
470 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
6.5nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$232.20100
$2322.01
BSM100GD120DN2BOSA1 Product Details
BSM100GD120DN2BOSA1 Description
The BSM100GD120DN2BOSA1 is an IGBT Power Module. IGBT modules from Infineon have low switching losses and can switch frequencies up to 60 Khz.
The IGBTs are used in a variety of power modules, such as the PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V and the ECONOPACK packages with collector emitter voltage at 1200V. Industrial, commercial, construction, and agricultural vehicles all use PrimePACK IGBTs. Inverters, UPS systems, and industrial drives are among the hard switching and soft switching applications that the N-Channel TRENCHSTOP? and Fieldstop IGBT Modules are appropriate for.
A three-terminal power semiconductor with high efficiency and quick switching is known as an Insulated Gate Bipolar Transistor, or IGBT. By fusing a bipolar power transistor for the switch and an isolated gate FET for the control input into a single component, the IGBT combines the straightforward gate-drive properties of MOSFETs with the high-current and low-saturation-voltage capabilities of bipolar transistors.