IFS100B17N3E4PB11BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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IFS100B17N3E4PB11BPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
36 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
34
ECCN Code
EAR99
Additional Feature
UL RECOGNIZED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-XUFM-X34
Number of Elements
6
Configuration
Full Bridge
Case Connection
ISOLATED
Power - Max
600W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
150A
Turn On Time
260 ns
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 100A
Turn Off Time-Nom (toff)
780 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
9nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
6
$186.06000
$1116.36
IFS100B17N3E4PB11BPSA1 Product Details
IFS100B17N3E4PB11BPSA1 Description
IFS100B17N3E4PB11BPSA1 is a 1700v MIPAQ™basemodule with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / pre-applied Thermal Interface Material. The IFS100B17N3E4PB11BPSA1 can be applied in motor drives, and UPS systems. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IFS100B17N3E4PB11BPSA1 is in the tray package with 600W Power dissipations.