APTGT200H120G

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Manufacturer part number:APTGT200H120G

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 1200V 280A 890W SP6

Case Package:SOT-23

Datasheet:APTGT200H120G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	12
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2012
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Max Power Dissipation	890W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	12
Number of Elements	4
Configuration	Full Bridge Inverter
Case Connection	ISOLATED
Power - Max	890W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	280A
Current - Collector Cutoff (Max)	350μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	14nF
Turn On Time	340 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 200A
Turn Off Time-Nom (toff)	610 ns
IGBT Type	Trench Field Stop
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	14nF @ 25V
RoHS Status	RoHS Compliant