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FS100R12KT3BOSA1

FS100R12KT3BOSA1

FS100R12KT3BOSA1

Infineon Technologies

FS100R12KT3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FS100R12KT3BOSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 35
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 35
JESD-30 Code R-XUFM-X35
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 480W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 140A
Turn On Time 340 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 100A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 7.1nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $226.159661 $226.159661
10 $218.723077 $2187.23077
25 $217.202658 $5430.06645
50 $215.692808 $10784.6404
100 $211.256423 $21125.6423
500 $196.152668 $98076.334
FS100R12KT3BOSA1 Product Details

FS100R12KT3BOSA1 Description


FS100R12KT3BOSA1 developed by Infineon Technologies belongs to the family of EconoPACK?3 with fast trench/fieldstop IGBT3 and emitter controlled high-efficiency diode. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 



FS100R12KT3BOSA1 Features


Energy saving

Easy installation and maintenance

Stable heat dissipation

High efficiency diode



FS100R12KT3BOSA1 Applications


Rail transit

Smart grid

Aerospace

Electric vehicles 

New energy equipment


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