FS100R12N2T4B11BOSA1                       Description

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

FS100R12N2T4B11BOSA1                       Applications

·Auxiliary inverters

·Motor drives

·Servo drives

FS100R12N2T4B11BOSA1                       Features

·Low VcEsat

·Tjop=150°℃

·Trench IGBT 4

·VCEsatwith positive temperature coefficient

Mechanical Features

·AlzO3 substrate with low thermal resistance

·High power and thermal cycling capability*Integrated NTC temperature sensor

·Copper base plate