FS150R12KE3BOSA1 Description
FS150R12KE3BOSA1 is a 1200v IGBT. The transistor FS150R12KE3BOSA1 can be applied in Automotive, Hybrid, electric & powertrain systems, Communications equipment, Broadband fixed line access, Enterprise systems, and Enterprise machine due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FS150R12KE3BOSA1 is in the tray package with 700W power dissipation.
FS150R12KE3BOSA1 Features
Collector-emitter voltage: 1200V
DC-collector current Tc = 80°C: 150A
Surge forward current tp= 10 ms, Tvj= 25°C: 300A
Gate-emitter peak voltage VGEs: +/-20 V
Gate-emitter leakage current VcE=0 V,VGE= 20V, Tvj = 25°C IGEs: 400 nA
FS150R12KE3BOSA1 Applications
Automotive
Hybrid, electric & powertrain systems
Communications equipment
Broadband fixed line access
Enterprise systems
Enterprise machine
