FS25R12W1T4PBPSA1

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Manufacturer part number:FS25R12W1T4PBPSA1

Manufacturer:Infineon Technologies

Description:FS25R12W1T4PBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:FS25R12W1T4PBPSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Chassis Mount
Package / Case	Module
Operating Temperature	-40°C~150°C
Series	EasyPACK™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Configuration	Three Phase Inverter
Power - Max	205W
Input	Standard
Current - Collector Cutoff (Max)	1mA
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	45A
Vce(on) (Max) @ Vge, Ic	2.25V @ 15V, 25A
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
30	$32.40967	$972.2901

FS25R12W1T4PBPSA1 Description

FS25R12W1T4PBPSA1 developed by Infineon Technologies belongs to the family of IGBT modules. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of power transistor (Giant Transistor-GTR) and power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.