FS100R06KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS100R06KE3BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
35
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
35
JESD-30 Code
R-XUFM-X35
Qualification Status
Not Qualified
Number of Elements
6
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
335W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
100A
Turn On Time
100 ns
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 100A
Turn Off Time-Nom (toff)
370 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
6.2nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$107.90000
$1079
FS100R06KE3BOSA1 Product Details
FS100R06KE3BOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.