APT100GT120JRDQ4

new-10%

Manufacturer part number:APT100GT120JRDQ4

Manufacturer:Microsemi Corporation

Description:IGBT MOD 1200V 123A 570W ISOTOP

Case Package:SOT-23

Datasheet:APT100GT120JRDQ4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	29 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2001
Series	Thunderbolt IGBT®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY, UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	570W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	570W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	123A
Current - Collector Cutoff (Max)	200μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	7.85nF
Turn On Time	150 ns
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 100A
Turn Off Time-Nom (toff)	747 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	7.85nF @ 25V
VCEsat-Max	3.7 V
RoHS Status	RoHS Compliant