FMG1G100US60L datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available on our website
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FMG1G100US60L Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Supplier Device Package
7PM-GA
Operating Temperature
-40°C~150°C TJ
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Configuration
Single
Power - Max
400W
Input
Standard
Current - Collector Cutoff (Max)
250μA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
100A
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 100A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
10.84nF @ 30V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$46.631005
$46.631005
10
$43.991514
$439.91514
100
$41.501428
$4150.1428
500
$39.152291
$19576.1455
1000
$36.936123
$36936.123
FMG1G100US60L Product Details
FMG1G100US60L Description
Insulated Gate Bipolar Transistor (IGBT) power modules from On Semiconductor offer minimal conduction and switching losses in addition to durability against short circuits. FMG1G100US60L was made for uses where short circuit ruggedness is necessary, such as motor control, uninterrupted power supply (UPS), and general inverters.
FMG1G100US60L Features
High Speed Switching
High Input Impedance
UL Certified No. E209204
Fast & Soft Anti-Parallel FWD
Short Circuit rated 10us @ TC = 100°C, VGE = 15V
Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 100A